Semiconductor device with voltage sustaining zone
US6624472B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 12, 2001 |
| Grant date | Sep 23, 2003 |
| Priority date | — |
| Expiry date | Feb 12, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/118
Abstract
A semiconductor body has first and second opposed major surfaces. A first region meets the first major surface and at least one second region meets the second major surface. The semiconductor body provides a voltage-sustaining zone between the first and second regions. The voltage sustaining zone has third regions of one conductivity type interposed with fourth regions of the opposite conductivity type with the second and third regions providing a rectifying junction such that, in use, when the rectifying junction is forward biased in one mode of operation by a voltage applied between the first and second regions, a main current path is provided between the first and second major surfaces through the first region, the voltage-sustaining zone and the second region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.