Micromagnetic device having alloy of cobalt, phosphorus and iron
US6624498B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 20, 2001 |
| Grant date | Sep 23, 2003 |
| Priority date | — |
| Expiry date | Dec 20, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/00
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The process is provided involving formation of multilayer components in which a photoresist-type material is used not only as a conventional patterning material, but also as an insulating and/or planarizing material between magnetic or electrically conductive layers. A variety of integrated CMOS/micromagnetic components are thereby capable of being formed, including components containing planar inductors and transformers. Additionally, a particular technique is used to etch gold-containing seed layers from a substrate surface without damaging an electroplated copper coil. Also provided is a magnetic material particularly useful in devices such as inductors and transformers. The material is an amorphous iron-cobalt-phosphorus alloy having a composition of CoxPyFez, where x+y+z=100, x is 5 to 15, y is 13 to 20, and z is the remainder. The alloy typically exhibits a coercivity of 0.1 to 0.5 Oe, an electrical resistivity of 100 to 150 &mgr;&OHgr;-cm, and a saturation magnetization of about 16 to about 19 kG, all of which represent improvements over Permalloy.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.