Slurry for chemical mechanical polishing process and method of manufacturing semiconductor device using the same
US6626968B2 · kind B2 · utility
21Cited by
3References
27Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 21, 2001 |
| Grant date | Sep 30, 2003 |
| Priority date | — |
| Expiry date | Jul 8, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31053
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A slurry composition useful for chemical mechanical polishing of the surface of a material layer, e.g., a silicon oxide layer, is disclosed. A first material surface which is exposed to the slurry exhibits hydrophilicity, while a second material layer, e.g., a polysilicon layer, the surface of which is also exposed to the slurry, exhibits hydrophobicity, and accordingly acts as a polishing stopping layer. The slurry composition consists essentially of water, abrasive grains, and a polymer additive having both hydrophilic and hydrophobic functional groups.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.