Buried photodiode structure for CMOS image sensor
US6627475B1 · kind B1 · utility
10Cited by
9References
34Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 18, 2000 |
| Grant date | Sep 30, 2003 |
| Priority date | — |
| Expiry date | Jan 18, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/807
Abstract
A method of forming an image sensor is disclosed. A partially processed semiconductor wafer is provided, containing a p-type region. An n-type photodiode region is formed within the p-type region. A field oxide isolation region is then formed which extends beyond the p-type region and also covers the p-type region except for an active region and an overlap part of the n-type photodiode region. An n-channel MOSFET is fabricated in the active region with one of the source/drain regions of the MOSFET extending over the overlap part of the n-type photodiode region. A blanket transparent insulating layer is then deposited.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.