Method for making three-dimensional device
US6627518B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 18, 1999 |
| Grant date | Sep 30, 2003 |
| Priority date | — |
| Expiry date | Dec 31, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/12044
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for making a three-dimensional device is disclosed. The method includes a step of forming a first cleaving layer, a first intermediate layer, and a first transferred layer on a first translucent substrate and forming a second cleaving layer, a second intermediate layer, and a second transferred layer on a second translucent substrate. The method further includes a step for bonding of the first transferred layer to a transferring-side substrate on the side away from the first translucent substrate, with a first adhesive layer provided therebetween; a step for irradiating the first cleaving layer with illuminating light so as to form intralayer and/or interfacial cleavage in the first cleaving layer by ablation and then detaching the first transferred layer from the first translucent substrate to transfer the first transferred layer onto the transferring-side substrate; a step for bonding of the second transferred layer to the first transferred layer on the side away from the translucent substrate with a conductive adhesive layer provided therebetween; and a step for irradiating the second cleaving layer with the illuminating light as above, and then detaching the second tra…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.