Semiconductor device having fluorine containing silicon oxide layer as dielectric for wiring pattern having anti-reflective layer and insulating layer thereon
US6627996B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 6, 2000 |
| Grant date | Sep 30, 2003 |
| Priority date | — |
| Expiry date | Oct 6, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device with satisfactory bonding ability of a plasma SiOF oxide layer on a wiring and satisfactory burying ability for burying wiring space portions. The semiconductor substrate, forming an anti-reflection layer of a refractory metal or compound thereof, on the metal layer, and forming an insulation layer on the anti-reflection layer. There after, the insulation layer is patterned and a wiring is formed by etching the anti-reflection layer and the metal layer while taking the patterned insulation layer as a mask and leaving the anti-reflection layer and the insulation layer on the wiring. Subsequently, the patterned wiring is buried with an SiOF layer as an Si oxide layer containing fluorine, together with the anti-reflection layer and the insulation layer on the upper surface thereby.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.