Method for processing conductive layer structures and devices including such conductive layer structures
US6628358B1 · kind B1 · utility
14Cited by
9References
19Claims
0Family size
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Key dates
| Filing date | Aug 31, 2000 |
| Grant date | Sep 30, 2003 |
| Priority date | — |
| Expiry date | Feb 13, 2021 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F1/136277
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In a method for processing conductive layer structures in a four metal layer CMOS process, the step of depositing the third conductive layer (30) includes at least one succession of depositions of a light-absorbing layer (301;303) on top of a light-reflective layer (300;302), such that the total thickness of said third conductive layer (30) does not exceed 350 nm. Devices including these conductive layer structures, such as reflective type liquid crystal display devices as well as metal capacitor structures which are processed using the subject method are as well described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.