Thin film transistor having a covered channel and display unit using the same
US6628363B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 2, 1999 |
| Grant date | Sep 30, 2003 |
| Priority date | — |
| Expiry date | Jun 2, 2019 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG09G2310/0275
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A circuit having a CMOS configuration in which n-type and p-type thin film transistors are connected in a complementary manner to one another is employed as a drive circuit of a display or the like. The n-type and p-type thin film transistors have common gate electrodes and drain electrodes, with respective source electrodes being connected to difference power sources, thereby providing a complementary connection structure. A source electrode of that one of the n-type thin film transistor and the p-type thin film transistor that is subjected for a longer period of time to an off voltage, applied to the shared gate electrode, for turning that transistor off, is extended in such a manner as to overlap a channel formation region of the corresponding thin film transistor. This present a variation in characteristic of the thin film transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.