Semiconductor laser emitting apparatus
US6628687B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 21, 2001 |
| Grant date | Sep 30, 2003 |
| Priority date | — |
| Expiry date | Apr 21, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/18
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
To stabilize the near field pattern (NFP) in a semiconductor laser emitting apparatus which emits a laser beam in a multi-lateral mode and extend the application fields of the apparatus. A semiconductor laser emitting apparatus, which emits a laser beam in a multi-lateral mode, and comprises a cladding layer in a stripe form formed on an active layer, wherein a current injection region of the semiconductor laser emitting apparatus has a difference in optical absorption loss between the inside and the outside of the current injection region, wherein the cladding layer disposed on the outside of the current injection region is formed so as to have a thickness of 0.7 &mgr;m or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.