Semiconductor device manufacturing method and semiconductor device manufacturing by the same method
US6630393B2 · kind B2 · utility
5Cited by
13References
12Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Feb 14, 2001 |
| Grant date | Oct 7, 2003 |
| Priority date | — |
| Expiry date | Mar 9, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0228
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a high dielectric constant insulating film made of a metal oxide on a silicon substrate is provided using a material gas mixture containing an oxidizing agent without forming silicon oxide layer on a silicon substrate. The manufacturing method includes the steps of placing the semiconductor substrate into a reaction chamber; introducing an organic metal material, oxidizing agent, and a material having a reducing action; and forming a high dielectric constant gate insulating film on the semiconductor substrate by a chemical reaction in the reaction chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.