Semiconductor device and method of manufacturing the same
US6630412B2 · kind B2 · utility
4Cited by
10References
18Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Jul 3, 2001 |
| Grant date | Oct 7, 2003 |
| Priority date | — |
| Expiry date | Jul 3, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a semiconductor device manufacturing method for forming an interlayer insulating film having a low dielectric constant on a substrate 21 from a surface of which a copper wiring 23 is exposed, the interlayer insulating film consists of multi-layered insulating films 24, 25, 29 and the insulating film 24, that contacts to the copper wiring 23, out of the multi-layered insulating films 24, 25, 29 is formed by plasmanizing a film forming gas containing at least an alkyl compound having siloxane bonds and any one of nitrogen (N2) and ammonia (NH3) to react.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.