Method of using titanium doped aluminum oxide for passivation of ferroelectric materials and devices including the same
US6630702B2 · kind B2 · utility
4Cited by
1References
10Claims
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Key dates
| Filing date | Mar 27, 2001 |
| Grant date | Oct 7, 2003 |
| Priority date | — |
| Expiry date | Mar 30, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67086
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A passivation layer comprises a titanium-doped aluminum oxide layer for passivation of ferroelectric materials such as Pt/SBt/Ir—Ta—O devices. The titanium-doped aluminum oxide layer for passivation of ferroelectric materials has reduced stress and improved passivation properties, and is easy to deposit and be oxidized. The passivation layer in the MFM Structure resists breakdown and peeling during annealing of the device in a forming gas ambient.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.