Patent · US Expired

Solid state image sensing device having high image quality and fabricating method thereof

US6630722B1 · kind B1 · utility

12Cited by
3References
3Claims
0Family size

Assignee

Inventor

Key dates

Filing dateApr 7, 2000
Grant dateOct 7, 2003
Priority date
Expiry dateApr 7, 2020

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10F39/8063

Abstract

A color filter is formed by directly coating a color filter material on the entire groundwork device surface so as to bury the material in a recessed region, subjecting the material to pattern transfer exposure and thereafter subjecting the resulting material to a developing process. The thickness striation of the device is thus improved by burying the color filter material from a low position without interposition of a resist pattern layer. The edges of the color filter is formed into a forward taper shape, thereby assuring the continuity of the filter to the color filters of the other colors formed adjacent to the filter. A groundwork alignment mark can be directly detected from the surface of the color filter material that is located at a short distance from the substrate in the pattern transfer exposure process stage, so that a detection error is reduced for the reduction of image deterioration. There is formed no transparent layer such as a flattening layer in order to reduce an error in detecting the groundwork alignment mark when forming a microlens and to further improve the image quality. A high-quality solid state image sensing device remarkably contracted in the vertical…

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.