Thin film magnetic head assembly and method of manufacturing the same
US6631056B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 1, 2000 |
| Grant date | Oct 7, 2003 |
| Priority date | — |
| Expiry date | Jun 1, 2020 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B2005/3996
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
On a wafer-like substrate 1, there are formed a number of thin film magnetic head elements in matrix, each of which is formed to include a first shield film 3 formed on the wafer-like substrate 1, a first insulating film 71 formed on the first shield film, a magnetoresistive element 9 and first and second electrode films 11, 13 connected to respective ends of the magnetoresistive element formed on the first insulating film, a second shield film 5 formed to cover the magnetoresistive element and first and second electrode films 11, 13, a second insulating film 72 formed on the second shield film, and a conductive film 191 electrically connected to the first electrode film 11 and second shield film 5 and having a middle portion which is separated from a side edge of the second shield film 5 by a distance &Dgr;G2 viewed in a film stacking direction. Since the first electrode film 11 and second shield film 5 become equipotential, no voltage is applied across the first and second insulating films 71, 72 and dielectric breakdown does not occur. By cutting the middle portion of the conductive film 191, property of the magnetoresistive element can be measured. Since the middle portion of t…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.