Organic semiconductor laser device
US6631147B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 14, 1999 |
| Grant date | Oct 7, 2003 |
| Priority date | — |
| Expiry date | Sep 14, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/36
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An organic semiconductor laser device is composed of a positive electrode layer, an electron hole-transporting layer, a light-emitting layer containing an organic dye and having an open end, an electron-transporting layer, and a negative electrode layer in order. The electron hole-transporting layer and the electron-transporting layer satisfy the conditions of 1<n1/n2 and 1<n1/n3 (n1 is a refractive index of the light-emitting layer determined at a wavelength of the light emitted in the light-emitting layer, n2 is that of the electron hole-transporting layer, and n3 is that of the electron-transporting layer) and further satisfy the conditions; (d2 is a thickness of the electron hole-transporting layer, d3 is a thickness of the electron-transporting layer, and &lgr; is the wavelength of light emitted in the light-emitting layer)
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.