Parametrical generation laser
US6631151B1 · kind B1 · utility
1Cited by
6References
7Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Sep 29, 2000 |
| Grant date | Oct 7, 2003 |
| Priority date | — |
| Expiry date | Sep 29, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3412
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
This semiconductor laser comprises at least two layers of optically non-linear material as well as a quantum well at least located within one of the layers of optically non-linear material. The thicknesses and optical indices of these two layers are such that the waveguide constituted by these two layers has a modal phase matching condition for the process of parametrical fluorescence between the pump wave emitted by the quantum well and the parametrical conversion waves.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.