Surface emitting semiconductor laser and method of manufacturing the same
US6631152B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 28, 2001 |
| Grant date | Oct 7, 2003 |
| Priority date | — |
| Expiry date | Apr 17, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3202
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A surface emitting semiconductor laser of the present invention comprises a resonator formed on a semiconductor substrate having Miller indices (100). The resonator includes a pillar portion, and a current constriction layer is formed in this pillar portion. In the plane including the current constriction layer, the periphery of the pillar portion includes arc-shaped portions approximating parts of an inner edge of the current constriction layer. The arc-shaped portions are formed in the <010> direction, <001> direction, <0-10> direction, and <00-1> direction from the center of the inner edge of the current constriction layer, and are formed substantially in concentric circles with the part of the inner edge shape.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.