Method of forming a low inductance high capacitance capacitor
US6631540B2 · kind B2 · utility
5Cited by
18References
12Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Dec 19, 2000 |
| Grant date | Oct 14, 2003 |
| Priority date | — |
| Expiry date | Jul 30, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49904
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method of forming a capacitor with low inductance connection terminals, comprising a first surface including a first electrode of porous metal, forming a dielectric layer on the first electrode, forming a second electrode on the dielectric layer, attaching a plurality of electrically coupled connection terminals to the first electrode on the first surface and attaching a plurality of electrically coupled connection terminals to the second electrode on the first surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.