Method for manufacturing field emission device
US6632114B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 5, 2001 |
| Grant date | Oct 14, 2003 |
| Priority date | — |
| Expiry date | Mar 1, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J9/025
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A field emission device (FED) and a method for fabricating the FED are provided. The FED includes micro-tips with nano-sized surface features, and a focus gate electrode over a gate electrode, wherein one or more gates of the gate electrode is exposed through a single opening of the focus gate electrode. In the FED, occurrence of arcing is suppressed. Although an arcing occurs in the FED, damage of a cathode and a resistor layer is prevented, so that a higher working voltage can be applied to the anode. Also, due to the micro-tips with nano-sized surface features, the emission current density of the FED increases, so that a high-brightness display can be achieved with the FED. The gate turn-on voltage can be lowered due to the micro-tip as a collection of nano-sized tips, thereby reducing power consumption.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.