Method for forming transparent conductive film using chemically amplified resist
US6632115B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 17, 2001 |
| Grant date | Oct 14, 2003 |
| Priority date | — |
| Expiry date | Aug 17, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A method for patterning an indium-tin-oxide (ITO) film by using a chemically amplified resist, causing no resist separation nor adhesion degradation even if the ITO film is exposed to white light after the resist development. An amorphous ITO film is formed on a wafer. A negative chemically amplified resist is applied directly to the ITO film, and the resist film is exposed and developed. The structure having a resist pattern on the amorphous ITO film is free from resist separation and adhesion degradation even if the resist pattern is exposed to white light, and therefore the later manufacturing steps are not adversely affected, enabling proper visual inspection. After the structure is judged to be acceptable at the visual inspection, the amorphous ITO film is etched using the resist pattern as a mask, and then the resist pattern is removed. The ITO film is heated over the crystallization temperature of the ITO to form a crystallized ITO pattern having a chemical-resistance and a good electrical conductivity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.