Patent · US Expired

Polycrystalline thin film and method for preparing thereof, and superconducting oxide and method for preparation thereof

US6632539B1 · kind B1 · utility

22Cited by
18References
31Claims
0Family size

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Inventors

Key dates

Filing dateJul 25, 2001
Grant dateOct 14, 2003
Priority date
Expiry dateJul 25, 2021

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10S505/731
  • WIPO fieldSurface technology, coating
  • WIPO sectorChemistry

Abstract

The polycrystalline thin film is made of a composite oxide of a cubic crystal system which has a pyrochlore type crystalline structure of a composition represented as either AZrO or AHfO (A in the formula represents a rare earth element selected from among Y, Yb, Tm, Er, Ho, Dy, Eu, Gd, Sm, Nd, Pr, Ce and La) formed on the film forming surface of the polycrystalline substrate, wherein the grain boundary misalignment angle between the same crystal axes of different crystal grains in the polycrystalline thin film along a plane parallel to the film forming surface of the polycrystalline substrate are controlled within 30°.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.