Manufacturing method of active matrix substrate plate and manufacturing method therefor
US6632696B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 20, 2000 |
| Grant date | Oct 14, 2003 |
| Priority date | — |
| Expiry date | Aug 8, 2021 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F1/134363
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An active matrix substrate plate having superior properties is manufactured at high yield using four photolithographic fabrication steps. In step 1, the scanning line and the gate electrode extending from the scanning line are formed in the glass plate. In step 2, the gate insulation layer and the semiconductor layer comprised by amorphous silicon layer and n+ amorphous silicon layer is laminated to provide the semiconductor layer for the TFT section. In step 3, the transparent conductive layer and the metallic layer are laminated, and the signal line, the drain electrode extending from the signal line, the pixel electrode and the source electrode extending from the pixel electrode are formed, and the n+ amorphous silicon layer of the channel gap is removed by etching. In step 4, the protective insulation layer is formed, and the protective insulation layer and the metal layer above the pixel electrode are removed by etching.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.