Process for making a color selective Si detector array

US6632699B1 · kind B1 · utility

Assignee

• Forschungszentrum Jülich GmbH · DE

Inventors

• Michel Marso · Jülich, DE
• Michael Kruger · Aachen, DE
• Michael Berger · Bad Vilbel, DE
• Markus Thonissen · Nettetal, DE
• Hans Luth · Aachen, DE

Key dates

• Filing date: Nov 2, 2000
• Grant date: Oct 14, 2003
• Expiry date: Apr 18, 2022

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S438/96

Abstract

A multiplicity of components form a photodiode array on a substrate. Each of the components consists of a transistor of the p-n-p type with the outermost p-doped layer being transformed into an optical filter by control of the anodic etching operation utilizing transistor characteristics of the respective transistor. The result can provide red, blue and green filters in a color camera.