Color image sensor and method for fabricating the same
US6632702B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 7, 2002 |
| Grant date | Oct 14, 2003 |
| Priority date | — |
| Expiry date | Mar 7, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/803
Abstract
A method for fabricating a color image sensor for scanning and converting an optical image into electrical signals, includes the steps of: (a) forming a P-type semiconductor layer on a substrate; (b) forming field oxide layers on the P-type semiconductor layer to define regions for red, green and blue photodiodes; (c) providing an ion implantation mask having different mask patterns for the red, the green and the blue photodiodes; (d) implanting impurity ions into the P-type semiconductor layer through the use of said ion implantation mask to form N-type diffusion regions in the P-type semiconductor layer; and (e) applying a thermal process to the resulting structure to form different first, second and third depletion regions corresponding to the red, the green and the blue photodiodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.