Etching method, semiconductor and fabricating method for the same
US6632746B2 · kind B2 · utility
31Cited by
11References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 19, 2001 |
| Grant date | Oct 14, 2003 |
| Priority date | — |
| Expiry date | May 30, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76835
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An organic/inorganic hybrid film represented by SiCxHyOz (x>0, y≧0, z>0) is plasma-etched with an etching gas containing fluorine, carbon and nitrogen. During the etching, a carbon component is eliminated from the surface portion of the organic/inorganic hybrid film due to the existence of the nitrogen in the etching gas, to thereby reform the surface portion. The reformed surface portion is nicely plasma-etched with the etching gas containing fluorine and carbon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.