Semiconductor device
US6633070B2 · kind B2 · utility
25Cited by
4References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 18, 2001 |
| Grant date | Oct 14, 2003 |
| Priority date | — |
| Expiry date | Sep 18, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/017
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A field-effect transistor including a gate electrode, silicon layers, and source and drain regions at a surface of a silicon substrate. Sidewall insulating films on the opposite side surfaces of the gate electrode are located between the gate electrode and the silicon layers and contain respective voids.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.