Method of forming a switching device and structure therefor
US6633193B1 · kind B1 · utility
9Cited by
8References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 8, 2002 |
| Grant date | Oct 14, 2003 |
| Priority date | — |
| Expiry date | May 24, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K4/502
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A switching device (20) is formed to generate a ramp voltage by using a capacitor (48) formed on the semiconductor die (90) with the switching device (20). The switching device (20) drives a high-power device to conduct load currents for a load. The ramp voltage is used to gradually increase the drive that is applied to the high-power device in order to gradually increase the current conducted by the high-power device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.