Patent · US Expired

Hybrid power MOSFET

US6633195B2 · kind B2 · utility

72Cited by

10References

16Claims

0Family size

Assignee

Siemens Aktiengesellschaft · DE

Inventors

Eric Baudelot · Weisendorf, DE
Manfred Bruckmann · Wendelstein, DE
Heinz Mitlehner · Uttenreuth, DE
Dietrich Stephani · Bubenreuth, DE
Benno Weis · Hemhofen, DE

Key dates

Filing date	Jul 23, 2001
Grant date	Oct 14, 2003
Priority date	—
Expiry date	Jul 23, 2021

Classification

Technology area (CPC H)Electricity
CPC primaryH03K17/102
WIPO fieldBasic communication processes
WIPO sectorElectrical engineering

Abstract

A hybrid power MOSFET, comprising a MOSFET and a junction FET, the MOSFET and the junction FET being electrically connected in series is disclosed. In accordance with the present invention, the hybrid power MOSFET is provided with a device for reducing the change in the gate voltage of the junction FET. Thus, a hybrid power MOSFET is obtained in which high over-voltages no longer arise and whose EMC response is much improved.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.