Semiconductor laser and method for producing same
US6633597B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Dec 29, 1999 |
| Grant date | Oct 14, 2003 |
| Priority date | — |
| Expiry date | Dec 29, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/162
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser enabling a higher output without lowering the performance of the laser such as its reliability, that is, a Fabry-Perot type semiconductor laser having, successively grown on a substrate, a first cladding layer of a first conductivity type, an active layer having at least one quantum well layer and at least two barrier layers, and a second cladding layer of a second conductivity type, a pair of facing end faces of said active layer constituting a resonator, wherein an impurity and holes due to the impurity are diffused in at least one region near the end faces of said active layer, and the quantum well layer and the barrier layers constituting said active layer are made mixed-crystals.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.