High temperature sensor
US6634212B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 29, 2001 |
| Grant date | Oct 21, 2003 |
| Priority date | — |
| Expiry date | Jul 25, 2021 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N2027/222
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
High temperature substance sensor, includinga substrate (4),a device (6) for raising and maintaining the temperature of the sensor, anda layer like capacitor structure (38) with structure sizes smaller than 50 &mgr;m, upon which a functional layer (18) is applied.In accordance with the invention the layer-like capacitor structure (38) is produced by the following:application of a complete or already pre-structured electrically conductive layer as precursor of the capacitor structure (38) using a thick layer technique,structuring the electrically conductive layer using a photolithographic structuring process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.