Patent · US Expired

High temperature sensor

US6634212B2 · kind B2 · utility

4Cited by
9References
5Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJun 29, 2001
Grant dateOct 21, 2003
Priority date
Expiry dateJul 25, 2021

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG01N2027/222
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

High temperature substance sensor, includinga substrate (4),a device (6) for raising and maintaining the temperature of the sensor, anda layer like capacitor structure (38) with structure sizes smaller than 50 &mgr;m, upon which a functional layer (18) is applied.In accordance with the invention the layer-like capacitor structure (38) is produced by the following:application of a complete or already pre-structured electrically conductive layer as precursor of the capacitor structure (38) using a thick layer technique,structuring the electrically conductive layer using a photolithographic structuring process.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.