Method of etching and cleaning using fluorinated carbonyl compounds
US6635185B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 31, 1997 |
| Grant date | Oct 21, 2003 |
| Priority date | — |
| Expiry date | Dec 31, 2017 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method comprising etching a material under plasma etching conditions using an etching composition which has a GWP of no greater than about 3000 and which comprises at least one etchant compound having a formula selected from the group consisting of F—CO—[(CR1R2)m—CO]n—F and F—CO—R3—CO—F, and wherein:m=0, 1, 2, 3, 4, or 5;n=1;R1 & R2 represent H, F or CxHyFz; wherein:x=1 or 2; andy+z=2x+1;R3 represents CR4═CR5, R6R7C═C or C≡C; wherein:R4-7 represent H, F, or CxHyFz; wherein:x=1 or 2; andy+z=2x+1;and also including the cleaning of a surface by use of an etchant compound, and further including an etching composition which includes said etchant compound and also an etchant-modifier.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.