Infrared detecting element, infrared two-dimensional image sensor, and method of manufacturing the same
US6635495B2 · kind B2 · utility
9Cited by
6References
8Claims
0Family size
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Key dates
| Filing date | May 30, 2001 |
| Grant date | Oct 21, 2003 |
| Priority date | — |
| Expiry date | May 30, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N19/00
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
An infrared detecting capacitor formed of a ferroelectric film has its capacitor portion supported by first and second interconnecting lines to be held on an Si substrate located on both sides of a trench. A lower electrode is coupled with the first interconnecting line while an upper electrode is coupled with the second interconnecting line. The capacitor portion is a rectangle in shape in plan view without small triangular sections opposite to each other in the diagonal direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.