Formation of insulating aluminum oxide in semiconductor substrates
US6635559B2 · kind B2 · utility
431Cited by
9References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 6, 2001 |
| Grant date | Oct 21, 2003 |
| Priority date | — |
| Expiry date | Sep 6, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/544
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides methods and apparatus for creating insulating layers in Group III-V compound semiconductor structures having aluminum oxide with a substantially stoichiometric compositions. Such insulating layers find applications in a variety of semiconductor devices. For example, in one aspect, the invention provides vertical insulating layers separating two devices, such as photodiodes, formed on a semiconductor substrate from one another. In another aspect, the invention can provide such insulating layers as buried horizontal insulating layers of semiconductor devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.