Method of making metallization and contact structures in an integrated circuit
US6635566B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 15, 2000 |
| Grant date | Oct 21, 2003 |
| Priority date | — |
| Expiry date | Jul 2, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2221/1036
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention concerns a method for forming metallization and contact structures in an integrated circuit. The method involoves the steps of etching a trench in the trench dielectric layer a trench dielectric layer of a composite structure containing a semiconductor substrate comprising an active region, a gate structure thereover, and dielectric spacers adjacent to the gate structure, a contact dielectric layer; and the trench dielectric layer; etching the contact dielectric layer under conditions which do not damage the gate structure to form a first contact opening that exposes a region of the semiconductor substrate; and depositing a conductive material into the contact opening and the trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.