Process for forming aluminum or aluminum oxide thin film on substrates
US6635571B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 25, 2001 |
| Grant date | Oct 21, 2003 |
| Priority date | — |
| Expiry date | May 9, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76888
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed is a process for depositing an aluminum oxide thin film necessary for semiconductor devices. The process includes the steps of: subjecting a gaseous organoaluminum compound as an aluminum source in contact with a target substrate and depositing aluminum using plasma. The steps are sequentially repeated to form an aluminum thin film, and further includes the step of oxidizing the aluminum thin film using oxygen plasma. This deposition cycle is repeated to obtain an aluminum oxide thin film. The present invention uses an aluminum source containing less contaminant compared to the prior art, thus obtaining aluminum oxide of high quality. Furthermore, the temperature of the gas supply and the reactor can be lowered in relation to the prior art method to reduce costs in the fabrication of semiconductor devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.