Method for forming a thin-film transistor
US6635581B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Apr 11, 2002 |
| Grant date | Oct 21, 2003 |
| Priority date | — |
| Expiry date | Apr 11, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/0231
Abstract
A method for forming a thin film transistor (TFT) is disclosed. A gate electrode, insulating layer, semiconductor layer, doped silicon layer and metal layer are formed on a substrate. A first photoresist layer with a first absorptivity is formed on the metal layer. A second photoresist layer with a second absorptivity is formed on the first photoresist layer. The second absorptivity is higher than the first absorptivity. An exposure process and a development process are performed to form a first pattern on the first photoresist layer and a second pattern on the second photoresist layer at the same time. An etching process is then performed to transfer the first pattern into the semiconductor layer, the doped silicon layer and the metal layer and transfer the second pattern into the doped silicon layer and the metal layer. After performing the etching process, the first photoresist layer and the second photoresist layer are removed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.