Method of manufacturing semiconductor device
US6635582B2 · kind B2 · utility
5Cited by
7References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 15, 1999 |
| Grant date | Oct 21, 2003 |
| Priority date | — |
| Expiry date | Mar 15, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76838
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A pre-stripping treatment solution for treatment of metal surfaces before stripping photoresist which has been used for patterning a metal layer. Also provided is a method of removing the photoresist, and a method of manufacturing semiconductor devices using the above solution and method. In one aspect of the invention, the photoresist is first ashed. The ashed resultant structure is then treated, prior to stripping of the photoresist, with a pre-stripping treatment solution of an organic acid solution having a carboxyl group is mixed with deionized water at a volume ratio of 1:0 to 1:100.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.