Silicon strain gage having a thin layer of highly conductive silicon
US6635910B1 · kind B1 · utility
6Cited by
28References
12Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jul 22, 1999 |
| Grant date | Oct 21, 2003 |
| Priority date | — |
| Expiry date | Jul 22, 2019 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01L1/2293
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A semiconductor strain gage having an electrically resistive substrate layer and a layer of electrically conductive silicon supported by the substrate layer. The silicon layer can be an epitaxial silicon layer grown on a surface of the substrate layer or a diffused or ion-implanted layer formed in the surface of the substrate layer. Also, a force measuring and detecting device including a force responsive member and the above-described semiconductor strain gage attached to the force responsive member, the strain gage measuring forces applied to the force responsive member.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.