Bonding pad-oriented all-mode ESD protection structure
US6635931B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Apr 2, 2002 |
| Grant date | Oct 21, 2003 |
| Priority date | — |
| Expiry date | Apr 2, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3011
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An all-mode, bonding pad-oriented ESD (electrostatic discharge) protection structure, protects ICs against ESD pulses of all modes in all directions. A unique quasi-symmetrical layout design is devised to improve ESD structure. Physical symmetry and rounded layout provide uniform current and thermal distribution as well as symmetrical electrical operation characteristics. The ESD structure allows tunable triggering voltage, low holding voltage, low impedance, low leakage, fast response time and low parasitic effect. The ESD structure can easily be placed under or surrounding a bonding pad and consumes little extra silicon. The ESD structure can be implemented in commercial BiCMOS processes and is suitable for multiple-supply, mixed-signal, parasitic-sensitive RF and high-pin-count ICs.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.