Semiconductor device
US6635952B2 · kind B2 · utility
2Cited by
4References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 27, 2002 |
| Grant date | Oct 21, 2003 |
| Priority date | — |
| Expiry date | Mar 27, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device comprises: a semiconductor substrate; an insulating layer provided on said semiconductor substrate; a first semiconductor layer provided on said insulating layer; a plurality of openings penetrating said first semiconductor layer and said insulating layer and reaching said semiconductor substrate; and second semiconductor layers filling said openings by selective growth and connected to said semiconductor substrate, wherein areal sizes of said plurality of openings are substantially equal to each other.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.