Polyfuse trim read cell
US6636102B1 · kind B1 · utility
1Cited by
2References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 30, 2002 |
| Grant date | Oct 21, 2003 |
| Priority date | — |
| Expiry date | Jan 30, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C17/16
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A polysilicon fuse trim read cell utilizes a fuse structure in a single bit memory cell. When the fuse structure is blown, the memory cell can be read and its stored value retained as a digital output. The cell uses no power in the steady state.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.