Liquid crystal display device having improved TFTs and a fabrication method thereof
US6636280B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 20, 2000 |
| Grant date | Oct 21, 2003 |
| Priority date | — |
| Expiry date | Nov 20, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6745
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A liquid crystal display device is provided with a pixel area on a substrate having plural gate lines, plural drain lines, plural thin film transistors and plural pixel electrodes corresponding to the plural thin film transistors, and a drive circuit area disposed at a periphery of the substrate and having a drive circuit for driving the plural thin film transistors. The thin film transistor has a polycrystalline silicon semiconductor layer formed on the substrate, a gate electrode formed on the polycrystalline silicon semiconductor layer with a gate insulating film interposed therebetween, an insulating film to cover the polycrystalline silicon semiconductor layer, the gate insulating film and the gate electrode, a drain electrode formed on the insulating film and electrically connected to the polycrystalline silicon semiconductor layer, and a source electrode formed on the insulating film, spaced from the drain electrode and electrically connected to the polycrystalline silicon semiconductor layer. The unevenness of a surface of the polycrystalline silicon semiconductor layer is within 10% of a thickness of the polycrystalline silicon semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.