Magnetoresistive effect sensor, thin-film magnetic head with the sensor, manufacturing method of magnetoresistive sensor and manufacturing method of thin-film magnetic head
US6636398B2 · kind B2 · utility
9Cited by
7References
45Claims
0Family size
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Key dates
| Filing date | May 31, 2001 |
| Grant date | Oct 21, 2003 |
| Priority date | — |
| Expiry date | Dec 21, 2021 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B2005/3996
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A MR sensor includes at least one pinned layer, at least one nonmagnetic layer, and a free layer layered with the at least one pinned layer via the at least one nonmagnetic layer. A magnetization direction of the at least one pinned layer is fixed, and a magnetization direction of the free layer is variable depending upon a magnetic field applied to the free layer. A nonmagnetic metal is diffused in at least part of the free layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.