Surface emitting semiconductor laser, surface emitting semiconductor laser array, and method for manufacturing surface emitting semiconductor laser
US6636542B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Feb 16, 1999 |
| Grant date | Oct 21, 2003 |
| Priority date | — |
| Expiry date | Feb 16, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/18355
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A surface emitting semiconductor laser and a method for manufacturing a surface emitting semiconductor laser array which are capable of controlling the polarization plane of a laser beam in constant direction and obtaining a low threshold current are provided. The surface emitting semiconductor laser is provided with a first reflection mirror layer of the first conduction type formed on the main plane of a semiconductor substrate, an active layer having a quantum well laminated above the first reflection mirror layer, a post having a second reflection mirror layer of the second conduction type different from the first conduction type for constituting an resonator structure together with the first reflection mirror, and plurality of peripheral high resistance layers having the periphery of high resistance inserted between the first reflection mirror layer and the second reflection mirror layer, and which plurality of peripheral high resistance layers are different from each other in proportion of non-high resistance in the plane parallel to the main plane of the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.