Substrate for a transfer mask, transfer mask, and method of manufacturing the transfer mask
US6638666B2 · kind B2 · utility
0Cited by
3References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 23, 2002 |
| Grant date | Oct 28, 2003 |
| Priority date | — |
| Expiry date | Jan 23, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31794
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A substrate for a transfer mask, which comprises a first silicon layer formed of monocrystalline silicon, a silicon oxide film formed on the first silicon layer and having a thickness ranging from 0.2 to 0.8 &mgr;m, and a second silicon layer formed on the silicon oxide film. A transfer mask which is manufactured by making use of this substrate is featured in that it is possible to prevent a transfer pattern from being cracked or destroyed due to stress from the silicon oxide film on the occasion of manufacturing the transfer mask, thereby providing a defect-free transfer mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.