Polymer for chemical amplified photoresist compositions
US6639035B1 · kind B1 · utility
15Cited by
3References
27Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 28, 2002 |
| Grant date | Oct 28, 2003 |
| Priority date | — |
| Expiry date | May 28, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/0397
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present invention discloses a polymer having a repeated unit of the formula (II), wherein R1 is H, haloalkyl group or C1-C4 alkyl group; R2 is hydroxyl group, C1-C8 alkoxy group or C1-C8 thioalkyl group; G is (CH2)n, O or S, wherein n is 0, 1, 2, 3 or 4; Rc is a lactone group; and m is 1, 2 or 3. The polymer of the present invention can be used to form the chemical amplified photoresist composition, which can then be applied to general lithography processes, and particularly to the lithography of ArF, KrF or the like light source, and exhibit excellent resolution, figures and photosensitivity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.