Gaseous ion source feed for oxygen ion implantation
US6639223B2 · kind B2 · utility
6Cited by
3References
21Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | May 6, 2002 |
| Grant date | Oct 28, 2003 |
| Priority date | — |
| Expiry date | May 6, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31701
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Methods and apparatus are provided for generating oxygen ions in an ion source having an arc chamber containing at least one oxidizable metal. The method includes the steps of feeding gaseous H2O into the arc chamber and operating the arc chamber in a temperature range where the free energy of formation of gaseous H2O is less than the free energy of formation of oxides of the oxidizable metal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.