High-energy ion implanter for fabricating a semiconductor device
US6639230B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Apr 25, 2002 |
| Grant date | Oct 28, 2003 |
| Priority date | — |
| Expiry date | Apr 25, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3171
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A high-energy ion implanter for fabricating a semiconductor device includes a low-energy accelerator for converting a polarity of ions flowed in from an ion source; a stripper for converting the ions accelerated from the low-energy accelerator to positive ions in vacuum conditions; a high-energy accelerator for accelerating, in high-energy, the positive ions that are converted in the stripper; a turbo pump for providing vacuum conditions in the stripper; a current sensor for detecting currents to check for abnormal operating conditions of the turbo pump; and a central processing unit (CPU) that interrupts a circuit breaker to suspend the ion implanting process in response to the level of current detected in the current sensor. The high-energy ion implanter of the present invention is capable of preventing an unsuccessful ion implanting process by suspending operation thereof when abnormal operating conditions are detected.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.