Semiconductor device and method of fabricating the same
US6639244B1 · kind B1 · utility
222Cited by
13References
30Claims
0Family size
Assignee
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Key dates
| Filing date | Jan 10, 2000 |
| Grant date | Oct 28, 2003 |
| Priority date | — |
| Expiry date | Jan 10, 2020 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F1/136213
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor device having high TFT characteristics is realized. In a pixel matrix circuit of an AM-LCD, a lower electrode of a storage capacitor is made to include an element in group 15 and a catalytic element used for crystallization, so that its resistance is reduced. Further, a dielectric of the storage capacitor is made thin, so that capacity can be secured without increasing an area for formation of the capacitance. Thus, it becomes possible to secure sufficient storage capacitor even in the AM-LCD having a size of 1 inch or less in diagonal without lowering an opening ratio.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.