Semiconductor device and semiconductor chip using SOI substrate
US6639280B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 7, 2002 |
| Grant date | Oct 28, 2003 |
| Priority date | — |
| Expiry date | Nov 7, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A laminated substrate is formed by laminating a device formation layer made of single crystalline semiconductor on a supporting substrate made of single crystalline semiconductor via an insulating layer with making one direction of a crystallographic axis of the device formation layer be shifted from a corresponding direction of a crystallographic axis of the supporting substrate. Semiconductor devices are formed in the device formation layer within a plurality of areas divided by scribe lines extending to a direction being parallel to a direction of a crystallographic axis where the supporting substrate is easy to be cleaved. The laminated substrate is split into a plurality of chips by cleaving the supporting substrate along the scribe lines. A semiconductor device can easily be split into chips even if a moving direction of carrier and an extending direction of wiring are shifted from an easy-cleaved direction of a crystallographic axis.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.